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B1016A Dataheets PDF



Part Number B1016A
Manufacturers Toshiba
Logo Toshiba
Description 2SB1016A
Datasheet B1016A DatasheetB1016A Datasheet (PDF)

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications 2SB1016A Unit: mm • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE (sat) = −2.0 V (max) • Complementary to 2SD1407A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −100 V Collector-emitter voltage VCEO −100 V Emitter-base voltage VEBO −5 V Collector current IC −5 A Base current IB −0.5 A Collector po.

  B1016A   B1016A


B1015A B1016A B1037


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