Ordering number:2040A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1122/2SD1622
Low-Frequency Power Amplifier Applic...
Ordering number:2040A
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SB1122/2SD1622
Low-Frequency Power Amplifier Applications
Applications
· Voltage
regulators relay drivers, lamp drivers, electrical equipment.
Features
· Adoption of FBET process.. · Very small size making it easy to provide high-
density hybrid IC’s.
Package Dimensions
unit:mm 2038
[2SB1122/2SD1622]
E : Emitter C : Collector B : Base
( ) : 2SB1122
Specifications
SANYO : PCP (Bottom view)
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO
IC ICP PC
Tj Tstg
Conditions Mounted on ceramic board (250mm2×0.8mm)
Ratings (–)60 (–)50 (–)5 (–)1 (–)2 500 1.3 150
–55 to +150
Unit V V V A A
mW W ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product Output Capacitance
Symbol
Conditions
ICBO IEBO hFE1 hFE2
fT Cob
VCB=(–)50V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)100mA VCE=(–)2V, IC=(–)1A VCE=(–)10V, IC=(–)50mA VCB=(–)10V, f=1MHz
Ratings min typ
100* 30
150 (12) 8.5
max (–)100 (–)100
560*
Unit nA nA
MHz pF pF
* ; The 2SB1122/2SD1622 are classified by 100mA hFE as follows : 100 R 200 140 S 280 200 T 400 280 U 560
Any and all SANYO products described or contained herein do not have specifications that can handle ...