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B1123 Dataheets PDF



Part Number B1123
Manufacturers Sanyo
Logo Sanyo
Description 2SB1123
Datasheet B1123 DatasheetB1123 Datasheet (PDF)

Ordering number : ENN1727D 2SB1123 / 2SD1623 PNP / NPN Epitaxial Planar Silicon Transistors 2SB1123 / 2SD1623 High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. Package Dimensions unit : mm 2038A Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity and wide ASO. • Fast switching speed. • The ultraminiature package facilitates higher-density mounting, thus all.

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Ordering number : ENN1727D 2SB1123 / 2SD1623 PNP / NPN Epitaxial Planar Silicon Transistors 2SB1123 / 2SD1623 High-Current Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment. Package Dimensions unit : mm 2038A Features • Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity and wide ASO. • Fast switching speed. • The ultraminiature package facilitates higher-density mounting, thus allows the applied hybrid IC’s further miniaturization. Specifications ( ) : 2SB1123 Absolute Maximum Ratings at Ta=25°C [2SB1123 / 2SD1623] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 3 1.5 2 3.0 1 0.75 0.4 1 : Base 2 : Collector 3 : Emitter SANYO : PCP Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta=25°C Conditions Mounted on a ceramic board (250mm2!0.8mm) Ratings (--)60 (--)50 (--)6 (--)2 (--)4 0.5 1.3 150 --55 to +150 Unit V V V A A W W °C °C Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(--)50V, IE=0 Emitter Cutoff Current IEBO VEB=(--)4V, IC=0 DC Current Gain hFE(1) hFE(2) VCE=(--)2V, IC=(--)100mA VCE=(--)2V, IC=(--)1.5A * : The 2SB1123 / 2SD1623 are classified by 100mA hFE as follows : Rank R S T U hFE 100 to 200 140 to 280 200 to 400 280 to 560 Marking 2SB1123 : BF 2SD1623 : DF min 100* 40 Ratings typ max (--)100 (--)100 560* Unit nA nA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1501 TS IM / 92098 HA (KT) / 4107 KI / N275 KI / 3045 MW, TS No.1727-1/5 2SB1123 / 2SD1623 Continued from preceding page. Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol Conditions fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf VCE=(--)10V, IC=(--)50mA VCB=(--)10V, f=1MHz IC=(--)1A, IB=(--)50mA IC=(--)1A, IB=(--)50mA IC=(--)10µA, IE=0 IC=(--)1mA, RBE=∞ IE=(--)10µA, IC=0 See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Switching Time Test Circuit PW=20µs D.C.≤1% INPUT VR IB1 RB IB2 OUTPUT RL=50Ω 50Ω ++ 100µF 470µF --5V 25V 10IB1= --10IB2=IC=500mA (For PNP, the polarity is reversed) Ratings min typ 150 (22)12 (--0.3)0.15 (--)0.9 (--)60 (--)50 (--)6 (60)60 (450)550 (30)30 max (--0.7)0.4 (--)1.2 Unit MHz pF V V V V V ns ns ns Collector Current, IC -- A --2.4 --2.0 --1.6 --1.2 --0.8 --0.4 0 0 --1200 --1000 --800 --600 --400 --200 0 0 IC -- VCE --50mA --20mA 2SB1123 Pulse --10mA --8mA --6mA --4mA --2mA IB=0 --0.4 --0.8 --1.2 --1.6 --2.0 --2.4 Collector-to-Emitter Voltage, VCE -- V ITR08891 IC -- VCE --7mA --6mA 2SB1123 Pulse --5mA --4mA --3mA --2mA --1mA IB=0 --2 --4 --6 --8 --10 --12 Collector-to-Emitter Voltage, VCE -- V ITR08893 Collector Current, IC -- mA Collector Current, IC -- A 2.4 2.0 1.6 1.2 0.8 0.4 0 0 1200 1000 800 600 400 200 0 0 50mA IC -- VCE 40mA 25mA 2SD1623 Pulse 15mA 8mA 4mA 2mA IB=0 0.4 0.8 1.2 1.6 2.0 2.4 Collector-to-Emitter Voltage, VCE -- V ITR08892 IC -- VCE 7mA 6mA 2SD1623 Pulse 5mA 4mA 3mA 2mA 1mA IB=0 2 4 6 8 10 12 Collector-to-Emitter Voltage, VCE -- V ITR08894 No.1727-2/5 Collector Current, IC -- mA 2SB1123 / 2SD1623 --1200 --1000 IC -- VBE 2SB1123 VCE= --2V 1200 1000 IC -- VBE 2SD1623 VCE=2V Collector Current, IC -- mA Collector Current, IC -- mA --800 800 --600 600 --400 400 DC Current Gain, hFE Gain-Bandwidth Product, f T -- MHz --200 0 0 1000 7 5 3 2 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE -- V ITR08895 hFE -- IC 2SB1123 VCE= --2V 100 7 5 3 2 10 --10 1000 7 5 2 3 5 7 --100 2 3 5 7 --1000 2 3 5 Collector Current, IC -- mA f T -- IC ITR08897 2SB1123 VCB=10V 3 2 100 7 5 3 .


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