Document
Ordering number : ENN1727D
2SB1123 / 2SD1623
PNP / NPN Epitaxial Planar Silicon Transistors
2SB1123 / 2SD1623
High-Current Switching Applications
Applications
• Voltage regulators, relay drivers, lamp drivers, electrical equipment.
Package Dimensions
unit : mm 2038A
Features
• Adoption of FBET, MBIT processes. • Low collector-to-emitter saturation voltage. • Large current capacity and wide ASO. • Fast switching speed. • The ultraminiature package facilitates
higher-density mounting, thus allows the applied hybrid IC’s further miniaturization.
Specifications
( ) : 2SB1123 Absolute Maximum Ratings at Ta=25°C
[2SB1123 / 2SD1623] 4.5 1.6 1.5
1.0 2.5 4.25max
0.4 0.5
3 1.5 2 3.0
1
0.75
0.4
1 : Base 2 : Collector 3 : Emitter
SANYO : PCP
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Symbol
VCBO VCEO VEBO
IC ICP
Collector Dissipation
PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta=25°C
Conditions Mounted on a ceramic board (250mm2!0.8mm)
Ratings (--)60 (--)50 (--)6 (--)2 (--)4 0.5 1.3 150
--55 to +150
Unit V V V A A W W °C °C
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO
VCB=(--)50V, IE=0
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0
DC Current Gain
hFE(1) hFE(2)
VCE=(--)2V, IC=(--)100mA VCE=(--)2V, IC=(--)1.5A
* : The 2SB1123 / 2SD1623 are classified by 100mA hFE as follows :
Rank
R
S
T
U
hFE 100 to 200 140 to 280 200 to 400 280 to 560 Marking 2SB1123 : BF
2SD1623 : DF
min
100* 40
Ratings typ
max (--)100 (--)100
560*
Unit
nA nA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1501 TS IM / 92098 HA (KT) / 4107 KI / N275 KI / 3045 MW, TS No.1727-1/5
2SB1123 / 2SD1623
Continued from preceding page.
Parameter
Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time
Symbol
Conditions
fT Cob
VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO
ton tstg
tf
VCE=(--)10V, IC=(--)50mA VCB=(--)10V, f=1MHz IC=(--)1A, IB=(--)50mA IC=(--)1A, IB=(--)50mA IC=(--)10µA, IE=0 IC=(--)1mA, RBE=∞ IE=(--)10µA, IC=0 See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Switching Time Test Circuit
PW=20µs D.C.≤1%
INPUT
VR
IB1 RB
IB2
OUTPUT RL=50Ω
50Ω
++
100µF
470µF
--5V 25V
10IB1= --10IB2=IC=500mA (For PNP, the polarity is reversed)
Ratings min typ
150 (22)12 (--0.3)0.15 (--)0.9 (--)60 (--)50 (--)6 (60)60 (450)550 (30)30
max
(--0.7)0.4 (--)1.2
Unit
MHz pF V V V V V ns ns ns
Collector Current, IC -- A
--2.4 --2.0 --1.6 --1.2 --0.8 --0.4
0 0
--1200 --1000
--800 --600 --400 --200
0 0
IC -- VCE
--50mA
--20mA
2SB1123 Pulse
--10mA
--8mA --6mA
--4mA
--2mA
IB=0
--0.4
--0.8
--1.2
--1.6
--2.0
--2.4
Collector-to-Emitter Voltage, VCE -- V ITR08891
IC -- VCE
--7mA --6mA
2SB1123 Pulse
--5mA
--4mA
--3mA --2mA
--1mA
IB=0
--2 --4 --6 --8 --10 --12
Collector-to-Emitter Voltage, VCE -- V ITR08893
Collector Current, IC -- mA
Collector Current, IC -- A
2.4 2.0 1.6 1.2 0.8 0.4
0 0
1200 1000
800 600 400 200
0 0
50mA
IC -- VCE
40mA 25mA
2SD1623 Pulse
15mA
8mA
4mA
2mA
IB=0
0.4 0.8 1.2 1.6 2.0 2.4
Collector-to-Emitter Voltage, VCE -- V ITR08892
IC -- VCE
7mA 6mA
2SD1623 Pulse
5mA
4mA
3mA
2mA
1mA
IB=0
2 4 6 8 10 12
Collector-to-Emitter Voltage, VCE -- V ITR08894 No.1727-2/5
Collector Current, IC -- mA
2SB1123 / 2SD1623
--1200 --1000
IC -- VBE
2SB1123 VCE= --2V
1200 1000
IC -- VBE
2SD1623 VCE=2V
Collector Current, IC -- mA
Collector Current, IC -- mA
--800
800
--600
600
--400
400
DC Current Gain, hFE
Gain-Bandwidth Product, f T -- MHz
--200
0 0
1000 7 5
3 2
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base-to-Emitter Voltage, VBE -- V ITR08895
hFE -- IC
2SB1123 VCE= --2V
100 7 5
3 2
10 --10
1000 7 5
2 3 5 7 --100 2 3 5 7 --1000 2 3 5
Collector Current, IC -- mA
f T -- IC
ITR08897
2SB1123 VCB=10V
3 2
100 7 5
3 .