Ordering number:2420B
PNP Epitaxial Planar Silicon Transistor
2SB1131
Strobe, High-Current Switching Applications
Appl...
Ordering number:2420B
PNP Epitaxial Planar Silicon
Transistor
2SB1131
Strobe, High-Current Switching Applications
Applications
· Strobes, power supplies, relay drivers, lamp drivers.
Features
· Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity. · Fast switching time.
Package Dimensions
unit:mm 2006A
[2SB1131]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage
ICBO IEBO hFE1 hFE2
fT VCE(sat) VBE(sat)
VCB=–20V, IE=0 VEB=–4V, IC=0 VCE=–2V, IC=–500mA VCE=–2V, IC=–4A
VCE=–5V, IC=–200mA IC=–3A, IB=–60mA IC=–3A, IB=–60mA
* : The 2SB1131 is classified by 500mA hFE as follows :
100 R 200 140 S 280 200 T 400
EIAJ : SC-51 SANYO : MP
B : Base C : Collector E : Emitter
Ratings –25 –20 –5 –5 –8 1 150
–55 to +150
Unit V V V A A W ˚C ˚C
Ratings min typ
100* 60
320 –250 –1.0
max –500 –500 400*
–500 –1.3
Unit nA nA
MHz mV V
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high ...