B1135

Ordering number:2094B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1135/2SD1668 50V/7A Switching Applications Applications · Relay drivers, high-speed inverters, converters, and other general high-current switching applications. Features · Low-saturation collector-to-emitter voltage : VCE(sat)=–0.4V max. · Wide ASO leading to high resistance to breakdown. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SB1135/2SD1668] ( ) : 2SB1135 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(–)40V, IE=0 Emitter Cutoff Current DC Current Gain IEBO hFE1 hFE2 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)5A Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage fT VCE=(–)5V, IC=(–)1A VCE(sat) IC=(–)4A, IB=(–)0.4A * : The 2SB1135/2SD1668 are classified by 1A hFE as follows : 70 Q 140 100 R 200 140 S 280 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Ratings (–)60 (–)50 (–)6 (–)7 (–)12 2 30 150 –55 to +150 Unit V V V A A W W ˚C ˚C Ratings min typ 70* 30 10 max (–)0.1 (–)0.1 280* (–)0.4 Unit mA mA MHz V Any and all SANYO products described or contained her...