B1141

Ordering number:2020A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1141/2SD1681 18V/1.2A Switching Applications Applications · Converters, relay drivers, low-voltage and high power AF Amplifier. Features · Low saturation voltage and excellent linearity of hFE. · Wide ASO. Package Dimensions unit:mm 2042A [2SB1141/2SD1681] ( ) : 2SB1141 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance ICBO IEBO hFE1 hFE2 fT Cob VCB=(–)15V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)100mA VCE=(–)2V, IC=(–)1A VCE=(–)10V, IC=(–)50mA VCB=(–)10V, f=1MHz * : The 2SB1141/2SD1681 are classified by 100mA hFE as follows : 70 Q 140 100 R 200 140 S 280 200 T 400 B : Base C : Collector E : Emitter SANYO :TO-126ML Ratings (–)20 (–)18 (–)5 (–)1.2 (–)2.0 1.5 10 150 –55 to +125 Unit V V V A A W W ˚C ˚C Ratings min typ 70* 40 150 (30)20 max (–)100 (–)100 400* Unit nA nA MHz pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support sy...