Ordering number:2020A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1141/2SD1681
18V/1.2A Switching Applications
App...
Ordering number:2020A
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SB1141/2SD1681
18V/1.2A Switching Applications
Applications
· Converters, relay drivers, low-voltage and high power AF Amplifier.
Features
· Low saturation voltage and excellent linearity of hFE. · Wide ASO.
Package Dimensions
unit:mm 2042A
[2SB1141/2SD1681]
( ) : 2SB1141
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product Output Capacitance
ICBO IEBO hFE1 hFE2
fT Cob
VCB=(–)15V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)100mA VCE=(–)2V, IC=(–)1A VCE=(–)10V, IC=(–)50mA VCB=(–)10V, f=1MHz
* : The 2SB1141/2SD1681 are classified by 100mA hFE as follows : 70 Q 140 100 R 200 140 S 280
200 T 400
B : Base C : Collector E : Emitter
SANYO :TO-126ML
Ratings (–)20 (–)18 (–)5 (–)1.2 (–)2.0 1.5 10 150
–55 to +125
Unit V V V A A W W ˚C ˚C
Ratings min typ
70* 40
150 (30)20
max (–)100 (–)100
400*
Unit nA nA
MHz pF
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support sy...