B1165

Ordering number:2046A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1165/2SD1722 50V/5A Switching Applications Applications · Relay drivers, high-speed inverters, converters. Features · Low collector-to-emitter saturation voltage. · High fT. · Excellent linearity of hFE. · Fast switching time. Package Dimensions unit:mm 2043A [2SB1165/2SD1722] ( ) : 2SB1165 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product ICBO IEBO hFE1 hFE2 fT VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)0.5A VCE=(–)2V, IC=(–)4A VCE=(–)5V, IC=(–)1A Output Capacitance Cob VCB=(–)10V, f=1MHz * : The 2SB1165/2SD1722 are classified by 0.5A hFE as follows : 70 Q 140 100 R 200 B : Base C : Collector E : Emitter SANYO : TO-126LP Ratings (–)60 (–)50 (–)6 (–)5 (–)8 1.2 20 150 –55 to +150 Unit V V V A A W W ˚C ˚C Ratings min typ 70* 35 180 (130) 40(60) max (–)1 (–)1 400* Unit µA µA MHz MHz pF 140 S 280 200 T 400 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, ...