B633

Ordering number:513H PNP/NPN Epitaxial Planar Silicon Transistor 2SB633/2SD613 85V/6A, AF 25 to 35W Output Applications Features · High breakdown voltage, VCEO85V, high current 6A. · AF25 to 35W output. Package Dimensions unit:mm 2010C [2SB633/2SD613] ( ) : 2SB633 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage Base-to-Emitter Voltage Output Capacitance ICBO IEBO hFE1 hFE2 fT VCE(sat) VBE Cob VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)1A VCE=(–)5V, IC=(–)3A VCE=(–)5V, IC=(–)1A IC=(–)4A, IB=(–)0.4A IE=(–)5A, IC=(–)1A VCB=(–)10V, f=1MHz JEDEC : TO-220AB EIAJ : SC-46 1 : Base 2 : Collector 3 : Emitter Ratings (–)100 (–)85 (–)6 (–)6 (–)10 40 150 –55 to +150 Unit V V V A A W ˚C ˚C Ratings min typ 40* 20 15 (150) 110 max (–)0.1 (–)0.1 320* (–)2.0 (–)1.5 Unit mA mA MHz V V pF pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other...