Ordering number:679F
2SB775 : PNP Epitaxial Planar Silicon Transistor 2SD895 : NPN Triple Diffused Planar Silicon Trans...
Ordering number:679F
2SB775 :
PNP Epitaxial Planar Silicon
Transistor 2SD895 :
NPN Triple Diffused Planar Silicon
Transistor
2SB775/2SD895
85V/6A, AF 35W Output Applications
Features
· Wide ASO because of on-chip ballast resistance. · Capable of being mounted easily becasuse of one-
point fixing type plastic molded package (Interchangeable with TO-3). · Large current capacity : IC=6A · Highly resistance breakdown due to wide ASO.
Package Dimensions
unit:mm 2022A
[2SB775/2SD895]
( ) : 2SB775
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product Output Capacitance Base-to-Emitter Voltage Collector-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO IEBO hFE1 hFE2
fT Cob VBE VCE(sat)
VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)5V, IC=(–)1A VCE=(–)5V, IC=(–)3A VCE=(–)5V, IC=(–)1A VCB=(–)10V, f=1MHz VCE=(–)5V, IC=(–)1A IC=(–)4A, IB=(–)0.4A
1 : Base 2 : Collector 3 : Emitter
SANYO : TO-3PB
Ratings (–)100 (–)85 (–)6 (–)6 (–)10 60 150
–40 to +150
Unit V V V A A W ˚C ˚C
Ratings min typ
60* 20
(18)15 160
(–1.4) 0.9
max (–)0.1 (–)0.1 200*
(–)1.5 (–2.0)
2.0
Unit mA mA
MHz pF V V V
Any...
