B817 Transistors Datasheet

B817 Datasheet, PDF, Equivalent


Part Number

B817

Description

PNP Epitaxial Planar Silicon Transistors

Manufacture

Sanyo

Total Page 4 Pages
Datasheet
Download B817 Datasheet


B817
Ordering number:680F
PNP Epitaxial Planar Silicon Transistors
NPN Triple Diffused Planar Silicon Transistors
2SB817/2SD1047
140V/12A AF 60W Output Applications
Features
· Capable of being mounted easily because of one-
point fixing type plastic molded package (Inter-
changeable with TO-3).
· Wide ASO because of on-chip ballast resistance.
· Good depenedence of fT on current and excellent
high frequency responce.
Package Dimensions
unit:mm
2022A
[2SB817/2SD1047]
The descriptions in parentheses are for the 2SB817 only :
other descriptions than those in parentheses are common
to the 2SB817 and 2SD1047.
1 : Base
2 : Collector
3 : Emitter
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=(–)80V, IE=0
VEB=(–)4V, IC=0
VCE=(–)5V, IC=(–)1A
VCE=(–)5V, IC=(–)6A
VCE=(–)5V, IC=(–)1A
VCB=(–)10V, f=1MHz
* : The 2SB817/2SD1047 are classified by 1A hFE as follows :
60 D 120 100 E 200
SANYO : TO-3PB
Ratings
(–)160
(–)140
(–)6
(–)12
(–)15
100
150
–40 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ
60*
20
15
(300)
210
max
(–)0.1
(–)0.1
200*
Unit
mA
mA
MHz
pF
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/90595MO (KOTO)/4017KI/6284KI, MT 8-3416/7039 No.680–1/4

B817
Parameter
Base-to-Emitter Voltage
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Fall Time
Storage Time
Switching Time Test Circuit
2SB817/2SD1047
Symbol
Conditions
VBE VCE=(–)5V, IC=(–)1A
VCE(sat) IC=(–)5A, IB=(–)0.5A
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
IC=(–)5mA, IE=0
IC=(–)5mA, RBE=
IC=(–)50mA, RBE=
IE=(–)5mA, IC=0
See specified Test Circuit
tf See specified Test Circuit
tstg See specified Test Circuit
Ratings
min typ
(–)160
(–)140
(–)140
(–)6
0.6
(1.1)
(0.25)
0.26
(0.53)
0.68
(1.61)
6.88
max
1.5
2.5
Unit
V
V
V
V
V
V
V
µs
µs
µs
µs
µs
µs
No.680–2/4


Features Ordering number:680F PNP Epitaxial Plan ar Silicon Transistors NPN Triple Diffu sed Planar Silicon Transistors 2SB817/2 SD1047 140V/12A AF 60W Output Applicati ons Features · Capable of being mount ed easily because of onepoint fixing ty pe plastic molded package (Interchangea ble with TO-3). · Wide ASO because of on-chip ballast resistance. · Good dep enedence of fT on current and excellent high frequency responce. Package Dime nsions unit:mm 2022A [2SB817/2SD1047] The descriptions in parentheses are for the 2SB817 only : other descriptions t han those in parentheses are common to the 2SB817 and 2SD1047. 1 : Base 2 : C ollector 3 : Emitter Specifications A bsolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Col lector-to-Emitter Voltage Emitter-to-Ba se Voltage Collector Current Collector Current (Pulse) Collector Dissipation J unction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Ts tg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions P.
Keywords B817, datasheet, pdf, Sanyo, PNP, Epitaxial, Planar, Silicon, Transistors, 817, 17, 7, B81, B8, B, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)