B893

Ordering number:1023C PNP Epitaxial Planar Silicon Transistor 2SB893 Large-Current Driving Applications Applications · Power supplies, relay drivers, lamp drivers, strobes. Features · Low saturation voltage : VCE(sat)≤–0.45V (IC=–1.5A, IB=–0.15A). · Large current capacity and wide ASO : IC max=–2.5A. Package Dimensions unit:mm 2003A [2SB893] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Allowable Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance ICBO IEBO hFE1 hFE2 fT Cob VCB=–20V, IE=0 VEB=–4V, IC=0 VCE=–2V, IC=–500mA VCE=–2V, IC=–3A, pulse VCE=–10V, IC=–50mA VCB=–10V, f=1MHz * : The SB893 is classified by 500mA hFE as follows : 100 E 200 160 F 320 280 G 560 JEDEC : TO-92 EIAJ : SC-43 SANYO : NP B : Base C : Collector E : Emitter Ratings –20 –10 –7 –2.5 –5 0.75 150 –55 to +150 Unit V V V A A W ˚C ˚C Ratings min typ 100* 70 250 70 max –1.0 –1.0 560* Unit µA µA MHz pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control sy...