Ordering number:990C
PNP/NPN Epitaxial Planar Silicon Transistors
2SB903/2SD1212
30V/12A High-Speed Switching Applicati...
Ordering number:990C
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SB903/2SD1212
30V/12A High-Speed Switching Applications
Applications
· Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching applications.
Features
· Low collector-to-emitter saturation voltage : VCE(sat)=(–)0.5V (
PNP), 0.4V (
NPN) max. · Large current capacity.
Package Dimensions
unit:mm 2010C
[2SB903/2SD1212]
( ) : 2SB903
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain-Bandwidth Product
ICBO IEBO hFE1 hFE2
fT
VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)6A VCE=(–)5V, IC=(–)1A
* : The 2SB903/2SD1212 are graded as follows by hFE at 1A :
70 Q 140 100 R 200 140 S 280
JEDEC : TO-220AB EIAJ : SC-46
1 : Base 2 : Collector 3 : Emitter
Ratings (–)60 (–)30 (–)6 (–)12 (–)20 1.75 35 150
–55 to +150
Unit V V V A A W W ˚C ˚C
Ratings min typ
70* 30
120
max (–)0.1 (–)0.1 280*
Unit mA mA
MHz
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high leve...