Ordering number:1022A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB904/2SD1213
30V/12A High-Speed Switching Applicat...
Ordering number:1022A
PNP/
NPN Epitaxial Planar Silicon
Transistors
2SB904/2SD1213
30V/12A High-Speed Switching Applications
Applications
· Large current switching of relay drivers, high-speed inverters, converters.
Features
· Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (
PNP), 0.4V (
NPN) max. · Large current capacity.
Package Dimensions
unit:mm 2022A
[2SB904/2SD1213]
( ) : 2SB904
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation
Symbol
VCBO VCEO VEBO
IC ICP PC
Junction Temperature Storage Temperature
Tj Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Collector-to-Emitter Saturation Voltage
ICBO IEBO hFE1 hFE2 VCE(sat)
VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)10A IC=(–)8A, IB=(–)0.4A
* : The 2SB904/2SD1213 are classified as follows according to hFE at 1A.
70 Q 140 100 R 200 140 S 280
1 : Base 2 : Collector 3 : Emitter
SANYO : TO-3PB
Ratings (–)60 (–)30 (–)6 (–)20 (–)30 2.5 60 150
–55 to +150
Unit V V V A A W W ˚C ˚C
Ratings min typ
70* 30
(–0.25) 0.2
max (–)0.1 (–)0.1 280*
(–0.5) 0.4
Unit mA mA
V V
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels o...
