Power Transistors
2SD2052
Silicon NPN triple diffusion planar type
For high power amplification Complementary to 2SB136...
Power
Transistors
2SD2052
Silicon
NPN triple diffusion planar type
For high power amplification Complementary to 2SB1361
s Features
q Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics
q Wide area of safe operation (ASO) q High transition frequency fT q Optimum for the output stage of a HiFi audio amplifier q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCEO VEBO ICP IC
PC
150 150
5 15 9 100 3
Junction temperature Storage temperature
Tj 150 Tstg –55 to +155
Unit V V V A A
W
˚C ˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance
ICBO IEBO hFE1 hFE2* hFE3 VBE VCE(sat) fT Cob
VCB = 150V, IE = 0 VEB = 3V, IC = 0 VCE = 5V, IC = 20mA VCE = 5V, IC = 1A VCE = 5V, IC = 7A VCE = 5V, IC = 7A IC = 7A, IB = 0.7A VCE = 5V, IC = 0.5A, f = 1MHz VCB = 10V, IE = 0, f = 1MHz
*hFE2 Rank classification
Rank
Q
S
hFE2 60 to 120 80 to 160
P 100 to 200
16.2±0.5
21.0±0.5
12.5 3.5 15.0±0.2 0.7
Solder Dip
Unit: mm
15.0±0.3 11.0±0.2
φ3.2±0.1
5.0±0.2 3.2
2.0±0.2
1.1±0....
