A1296 Datasheet (data sheet) PDF - Toshiba Semiconductor





A1296 Datasheet - 2SA1296

A1296   A1296  

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1296 Power Ampli fier Applications Power Switching Appli cations 2SA1296 Unit: mm • Low satu ration voltage: VCE (sat) = −0.5 V (m ax) @IC = −2 A • Complementary to 2 SC3266. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Ratin g Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO


Manufacture Part Number Description

Toshiba

A1296

2SA1296




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