APT68GA60S

APT68GA60B APT68GA60S 600V High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the TO-247 APT68GA60S D3PAK poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even APT68GA60B when switching at high frequency. Single die IGBT FEATURES Fast switching with low EMI Very Low Eoff for maximum efficiency Ultra low Cres for improved noise immunity Low conduction loss Low gate charge Increased intrinsic gate resistance for low EMI RoHS compliant TYPICAL APPLICATIONS ZVS phase shifted and other full bridge Half bridge High power PFC boost Welding UPS, solar, and other inverters High frequency, high efficiency industrial Absolute Maximum Ratings Symbol Parameter Ratings Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL Collector Emitter Voltage Continuous Collector Current @ TC = 25°C 7 Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 Gate-Emitter Voltage 2 Total Power Dissipation @ TC = 25°C Switching Safe Operating Area @ TJ = 150°C Operating and Storage Junction Temperature Range Lead Temperature for...