MBR30100PT thru MBR30200PT
High Tjm Low IRRM Schottky Barrier Diodes
AC A
C(TAB)
A C
A
A=Anode, C=Cathode, TAB=Cath...
MBR30100PT thru MBR30200PT
High Tjm Low IRRM
Schottky Barrier Diodes
AC A
C(TAB)
A C
A
A=Anode, C=Cathode, TAB=Cathode
VRRM
VRMS
VDC
V
V
V
MBR30100PT 100
70
100
MBR30150PT 150
105 150
MBR30200PT 200
140 200
Dimensions TO-247AD
Dim. Millimeter Min. Max.
A 19.81 20.32 B 20.80 21.46
C 15.75 16.26 D 3.55 3.65
E 4.32 5.49
F
5.4 6.2
G 1.65 2.13
H
- 4.5
J
1.0 1.4
K 10.8 11.0
L
4.7 5.3
M
0.4 0.8
N
1.5 2.49
Inches Min. Max.
0.780 0.800 0.819 0.845
0.610 0.640 0.140 0.144
0.170 0.216 0.212 0.244
0.065 0.084
-
0.177
0.040 0.055 0.426 0.433
0.185 0.209 0.016 0.031
0.087 0.102
Symbol
Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=125oC
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD)
dv/dt Voltage Rate Of Change (Rated VR)
VF
Maximum Forward Voltage (Note 1)
IF=15A IF=15A IF=30A IF=30A
@TJ=25 oC @TJ=125 oC @TJ=25 oC @TJ=125 oC
Maximum Ratings
30
250
10000
0.85 0.70 0.98 0.85
IR
Maximum DC Reverse Current At Rated DC Blocking Voltage
@TJ=25oC @TJ=125oC
ROJC CJ TJ TSTG
Typical Thermal Resistance (Note 2) Typical Junction Capacitance Per Element (Note 3) Operating Temperature Range Storage Temperature Range
NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
0.05 10
2.2 700 -55 to +150 -55 to +150
FEATURES
* Metal of silicon rectifier, majority carrier conducton...