MBR30200PT

MBR30100PT thru MBR30200PT High Tjm Low IRRM Schottky Barrier Diodes AC A C(TAB) A C A A=Anode, C=Cathode, TAB=Cathode VRRM VRMS VDC V V V MBR30100PT 100 70 100 MBR30150PT 150 105 150 MBR30200PT 200 140 200 Dimensions TO-247AD Dim. Millimeter Min. Max. A 19.81 20.32 B 20.80 21.46 C 15.75 16.26 D 3.55 3.65 E 4.32 5.49 F 5.4 6.2 G 1.65 2.13 H - 4.5 J 1.0 1.4 K 10.8 11.0 L 4.7 5.3 M 0.4 0.8 N 1.5 2.49 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 - 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 Symbol Characteristics I(AV) Maximum Average Forward Rectified Current @TC=125oC IFSM Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) dv/dt Voltage Rate Of Change (Rated VR) VF Maximum Forward Voltage (Note 1) IF=15A IF=15A IF=30A IF=30A @TJ=25 oC @TJ=125 oC @TJ=25 oC @TJ=125 oC Maximum Ratings 30 250 10000 0.85 0.70 0.98 0.85 IR Maximum DC Reverse Current At Rated DC Blocking Voltage @TJ=25oC @TJ=125oC ROJC CJ TJ TSTG Typical Thermal Resistance (Note 2) Typical Junction Capacitance Per Element (Note 3) Operating Temperature Range Storage Temperature Range NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. 0.05 10 2.2 700 -55 to +150 -55 to +150 FEATURES * Metal of silicon rectifier, majority carrier conducton...