Document
TIGER ELECTRONIC CO.,LTD
FFM101 - FFM107
1.0A Surface Mount Fast Recovery Rectifiers
Features
Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. Tiny plastic SMD package. High current capability. Fast switching for high efficiency. High surge current capability. Glass passivated chip junction. Lead-free parts meet RoHS requirments.
Mechanical data
Case : Molded plastic, SMA Polarity : Indicated by cathode band Mounting Position : Any Weight : Approximated 0.01gram
SMA/DO-214AC
0.063(1.60) 0.051(1.30)
0.096(2.45) 0.078(2.00) 0.059(1.50) 0.035(0.90)
0.181(4.60) 0.161(4.10)
0.108(2.75) 0.096(2.45)
0.209(5.30) 0.193(4.90)
0.012(0.30) 0.006(0.15)
0.008(0.20) 0.002(0.05)
Dimensions in inches and(millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25oC ambient temperature unless otherwise specified.
Maximum ratings
PARAMETER Forward rectified current
See Fig.2
CONDITIONS
Forward surge current
Reverse current Thermal resistance Diode junction capacitance Storage temperature
8.3ms single half sine-wave superimposed on rate load (JEDEC methode)
VR = VRRM TA = 25 OC VR = VRRM TA = 100 OC Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol IO
MIN.
TYP.
MAX. UNIT 1.0 A
IFSM 30 A
5.0
IR
uA 100
RèJA CJ
42 OC/W 15 pF
TSTG
-65
+175 OC
SYMBOLS
FFM101 FFM102 FFM103 FFM104 FFM105 FFM106 FFM107
V
*
RRM
1
(V)
50
100 200
400
600
800
1000
V
*
RMS
2
(V)
35
70 140
280
420
560
700
V
*
R
3
(V)
50 100 200 400
600
800 1000
V
*
F
4
(V)
T
*
RR
5
(nS)
1.30
150
250 500
Operating temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage *5 Reverse recovery time
FFM101 - FFM107
1.0A Surface Mount Fast Recovery Rectifiers
INSTANTANEOUS FORWARD CURRENT,(A)
Rating and characteristic curves (FFM101 THRU FFM107)
FIG.1-TYPICAL FORWARD CHARACTERISTICS
50
10 3.0 1.0
0.1
TJ=25 C
Pulse Width 300us 1% Duty Cycle
.01 .6
.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50W NONINDUCTIVE
10W NONINDUCTIVE
(+)
25Vdc (approx.)
()
D.U.T.
1W NONINDUCTIVE
OSCILLISCOPE (NOTE 1)
()
PULSE GENERATOR
(NOTE 2)
(+)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms.
+0.5A
0 -0.25A
trr
| | | | | | | |
-1.0A
1cm SET TIME BASE FOR
50 / 10ns / cm
JUNCTION CAPACITANCE,(pF)
AVERAGE FORWARD CURRENT,(A)
PEAK FORWAARD SURGE CURRENT,(A)
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
1.2 1.0 0.8 0.6
0.4
0.2 0 0
Single Phase Half Wave 60Hz Resistive Or Inductive Load
20 40
60 80 100 120 140 160 180 200
AMBIENT TEMPERATURE ( C)
FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
50
40
30
TJ=25 C
8.3ms Single Half
20 Sine Wave
JEDEC method
10
0
.