TM4953S

TECH MOS Technology. Dual P-Channel High Density Trench MOSFET TM4953S TM4953FS(Pb-free) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max - 30V - 4.9A - 3.6A 53 @ VGS = - 10V 95 @ VGS = - 4.5V FEATURES ●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package. So-8 D1 D1 D2 D2 876 5 1 1234 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousa @ TA = 25 °C -Pulse b Drain-Source Diode Forward Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit -30 ± 20 - 4.9 - 20 - 1.7 2.0 - 55 to 150 Unit V V A A A W °C THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambienta ：Note ：a. Surface Mounted on FR4 Board , t ≤ 10sec . b. Pulse Test Pulse width ≤ 300us , Duty Cycle ≤ 2% . RthJA 62.5 °C/W DS-TM4953FS-02 Apr. , 2007 1 TM4953S TM4953FS(Pb-free) ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) Parameter Symbol Condition Min Typc Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0V , ID = -250uA -30 V Zero Gate Voltage Drain Current IDSS VDS = -24V , VGS = 0V -1 uA Gate-Body Leakage ON CHARACTERISTICSb IGSS VGS = -20V , VDS = 0V -100 nA Gate Threshold Voltage VGS(th) VDS = VGS , ID = -250uA -1.2 -1.8 -2.4 V Drain-Source On-State Resistance RDS(on) VGS = -10V , ID = -4.6A VGS = -4.5V , ID = -2.0A DRAIN-...