MDD3754

MDD3754 – P-Channel Trench MOSFET MDD3754 P-Channel Trench MOSFET, -40V, -24.4A, 43mΩ General Description The MDD3754 uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. Low RDS(ON), Low Gate Charge can be offering superior benefit in the application. Features VDS = -40V ID = -24.4A @VGS = -10V RDS(ON) < 43mΩ @ VGS = -10V < 58mΩ @ VGS = -4.5V Applications Inverters General purpose applications D G Absolute Maximum Ratings (TC =25o) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Characteristics (Note 2) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy Junction and Storage Temperature Range TC=25oC TC=100oC TC=25oC TC=100oC (Note 3) Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1) Symbol RθJA RθJC S Rating -40 ±20 -24.4 -15.4 -50 41.7 16.7 40.5 -55~+150 Unit V V A A A W mJ oC Rating 40 3.0 Unit oC/W October 2008. Version 1.0 1 MagnaChip Semiconductor Ltd. MDD3754 – P-Channel Trench MOSFET Ordering Information Part Number MDD3754RH Temp. Range -55~150oC Package TO-252 Packing Tape & Reel RoHS Status Halogen Free Electrical Characteristics (TJ =25oC unless otherwise noted) Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current Gate ...