320N20N | Infineon
Power-Transistor
IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary V DS R DS(on),max ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
•.
- 320N20N | Infineon
- Power-Transistor
- IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal .
- IPB320N20N3 G IPP320N20N3 G IPI320N20N3 G
OptiMOSTM3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary V DS R DS(on),max ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
• Ideal for high-frequency switching and synchronou.
