AiT Semiconductor Inc.
www.ait-ic.com
A3355
200mA, 4.5GHz, 12V, NPN SILICON EPITAXIAL HIGH FREQUENCY RF TRANSISTOR
DES...
AiT Semiconductor Inc.
www.ait-ic.com
A3355
200mA, 4.5GHz, 12V,
NPN SILICON EPITAXIAL HIGH FREQUENCY RF
TRANSISTOR
DESCRIPTION
FEATURES
The A3355 is an
NPN silicon Epitaxial
Transistor. It
has High frequency.
The A3355 is available in SOT-23 and TO-92
packages
Collector Current: 200mA (Max) High Frequency: 4.5GHz (Typ) Collector-Emitter Voltage: 12V Low noise and high gain bandwidth product High power gain Available in SOT-23 and TO-92 Packages
ORDERING INFORMATION
APPLICATION
Package Type
Part Number
SOT-23
E3 A3355E3R A3355E3VR
TO-92
A3355ZY Z A3355ZVY
R: Tape & Reel
Note
V: Halogen free Package Y: A : Ammo Package
B : Bulk Package
AiT provides all RoHS products
Suffix “ V “ means Halogen free Package
VHF UHF CATV
PIN DESCRIPTION
REV1.4
Pin # 1 2 3
Top View
Base Emitter Collector
- AUG 2007 RELEASED, OCT 2013 UPDATED -
Top View Function
-1-
AiT Semiconductor Inc.
www.ait-ic.com
ABSOLUTE MAXIMUM RATING
T=25℃ VCBO, Collector-Base Voltage VCEO, Collector-Emitter Voltage VEBO, Emitter-Base Voltage IC, Collector Current
PC, Collector Power Dissipation
TJ, Junction Temperature TSTG, Storage Temperature
SOT-23 TO-92
A3355
200mA, 4.5GHz, 12V,
NPN SILICON EPITAXIAL HIGH FREQUENCY RF
TRANSISTOR
20V 12V
3V 200mA
0.6W 0.2W 150℃ -65℃~ +150℃
ELECTRICAL CHARACTERISTICS
T=25℃
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Cu...