Document
High Voltage Power MOSFET
(Electrically Isolated Tab)
N-Channel Enhancement Mode
IXTF1N400
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
PD
TJ TJM Tstg
TL TSOLD
FC VISOL Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force 50/60Hz, 1 Minute
Maximum Ratings 4000 4000
V V
±20 V ±30 V
1A 3A
160 W
- 55 ... +150 150
- 55 ... +150
°C °C °C
300 °C 260 °C
20..120 / 4.5..27
N/lb.
4000
V~
5g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ±20V, VDS = 0V
IDSS VDS = 3.2kV, VGS = 0V
VDS = 4.0kV
VDS = 3.2kV
Note 2, TJ = 100°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values Min. Typ. Max.
2.0 4.0 V
±100 nA
50 μA 250 μA 250 μA
60 Ω
VDSS ID25
RDS(on)
= 4000V = 1A ≤ 60Ω
ISOPLUS i4-PakTM
12 5
Isolated Tab
1 = Gate 2 = Source
5 = Drain
Features
z Silicon Chip on Direct-Copper Bond (DCB) Substrate
z Isolated Mounting Surface z 4000V~ Electrical Isolation z Molding Epoxies meet UL 94 V-0
Flammability Classification
Advantages
z Easy to Mount z Space Savings z High Power Density
Applications
z High Voltage Power Supplies z Capacitor Discharge Applications z Pulse Circuits z Laser and X-Ray Generation Systems
© 2012 IXYS CORPORATION, All Rights Reserved
DS100159D(01/12)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs VDS = 50V, ID = 0.5 • ID25, Note 1
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on) tr td(off) tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 1A RG = 2Ω (External)
Qg(on) Qgs Qgd
VGS = 10V, VDS = 1kV, ID = 0.5 • ID25
RthJC RthCS
Characteristic Values Min. Typ. Max.
0.55
0.95
S
2530 93 30
pF pF pF
28 ns 24 ns 81 ns 90 ns
78 nC 10 nC 35 nC
0.78 °C/W 0.15 °C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS VGS = 0V
ISM Repetitive, Pulse Width Limited by TJM
VSD IF = 1A, VGS = 0V, Note 1
trr IF = 1A, -di/dt = 100A/μs, VR = 200V
Characteristic Values Min. Typ. Max.
1A
5A
4V
3.5 μs
IXTF1N400
ISOPLUS i4-PakTM (HV) Outline
Pin 1 = Gate Pin 2 = Soure Pin 3 = Drain Pin 4 = Isolated
Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Part must be heatsunk for high-temp Idss measurement.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072
4,881,106
4,931,844 5,017,508 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344
6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
IXTF1N400
ID - Amperes
ID - Amperes
1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
0 0
Fig. 1. Output Characteristics @ TJ = 25ºC
VGS = 10V 5V
4.5V
4V 3V 5 10 15 20 25 30 35 40 45 50 VDS - Volts
1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1
0 0
Fig. 3. Output Characteristics @ TJ = 125ºC
VGS = 10V 5V
4V
3V 10 20 30 40 50 60 70 80 90 100
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 0.5A Value vs. Drain Current
2.4
2.2 VGS = 10V
2.0 TJ = 125ºC 1.8
1.6
1.4
1.2 TJ = 25ºC
1.0
0.8 0
0.2 0.4 0.6 0.8
1
ID - MilliAmperes
1.2
1.4
ID - Amperes
RDS(on) - Normalized
ID - Amperes
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
1.4 VGS = 10V
1.2
5V 1
0.8
0.6
0.4
0.2
0 0
4.5V
4V 3V 50 100 150 200 250 300 350 400
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs. Junction Temperature
2.6
VGS = 10V 2.2
1.8 I D = 1.0A 1.4 I D = 0.5A
1.0
0.6
0.2 -50
-25
0 25 50 75 100 125 150 TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs. Case Temperature
1.2
1
0.8
0.6
0.4
0.2
0 -50
-25
0 25 50 75 100 125 150 TC - Degrees Centigrade
RDS(on) - Normalized
© 2012 IXYS CORPORATION, All Rights Reserved
IXTF1N400
ID - Amperes
Fig. 7. Input Admittance
1.4
1.2
1
0.8 TJ = 125ºC 25ºC
0.6 - 40ºC
0.4
0.2
0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VGS - Volts
Fig. 9. Forward Voltage Drop of Intrinsic Diode
2.4
2
1.6 TJ = 25ºC 1.2 TJ = 125ºC
0.8
0.4
0 0 0.5 1 1.5 2 2.5 3 3.5 VSD - Volts
10,000
f = 1 MHz
Fig. 11. Capacitance
1,000
Ciss
Coss 100
Z(th)JC - ºC / W
VGS - Volts
g f s - Siemens
2 1.8 1.6 1.4 1.2
1 0.8 0.6 0.4 0.2
0 0
Fig. 8. Transconductance
TJ = - 40ºC
25ºC 125ºC
0.2 0.4 0.6 0.8
1
ID - Amperes
1.2 1.4
Fig. 10. Gate Charge
10 9 VDS = 1000V 8 I D = 0.5A I G = 10mA 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal Impedance
1
0.1
IS - Amperes
Capacitance - PicoFarads
10 0
Crss
5 10 15 20 25 30 35 40 VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.01 0.0001
0.001
0.01 0.1 Pulse Width - Seconds
1 10
IXYS REF: T_1N400(8P)8-25-09-A
.