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IXTF1N400 Dataheets PDF



Part Number IXTF1N400
Manufacturers IXYS
Logo IXYS
Description High Voltage Power MOSFET
Datasheet IXTF1N400 DatasheetIXTF1N400 Datasheet (PDF)

High Voltage Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTF1N400 Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force 50/60Hz, 1 Minute Maximum Ratings 4000 4000 V V ±20 V ±30 V 1A 3A 160 W - 55 ... +150 150 - 55 ... +150 °C .

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High Voltage Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTF1N400 Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD FC VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force 50/60Hz, 1 Minute Maximum Ratings 4000 4000 V V ±20 V ±30 V 1A 3A 160 W - 55 ... +150 150 - 55 ... +150 °C °C °C 300 °C 260 °C 20..120 / 4.5..27 N/lb. 4000 V~ 5g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGS(th) VDS = VGS, ID = 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = 3.2kV, VGS = 0V VDS = 4.0kV VDS = 3.2kV Note 2, TJ = 100°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 2.0 4.0 V ±100 nA 50 μA 250 μA 250 μA 60 Ω VDSS ID25 RDS(on) = 4000V = 1A ≤ 60Ω ISOPLUS i4-PakTM 12 5 Isolated Tab 1 = Gate 2 = Source 5 = Drain Features z Silicon Chip on Direct-Copper Bond (DCB) Substrate z Isolated Mounting Surface z 4000V~ Electrical Isolation z Molding Epoxies meet UL 94 V-0 Flammability Classification Advantages z Easy to Mount z Space Savings z High Power Density Applications z High Voltage Power Supplies z Capacitor Discharge Applications z Pulse Circuits z Laser and X-Ray Generation Systems © 2012 IXYS CORPORATION, All Rights Reserved DS100159D(01/12) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = 50V, ID = 0.5 • ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 1A RG = 2Ω (External) Qg(on) Qgs Qgd VGS = 10V, VDS = 1kV, ID = 0.5 • ID25 RthJC RthCS Characteristic Values Min. Typ. Max. 0.55 0.95 S 2530 93 30 pF pF pF 28 ns 24 ns 81 ns 90 ns 78 nC 10 nC 35 nC 0.78 °C/W 0.15 °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 1A, VGS = 0V, Note 1 trr IF = 1A, -di/dt = 100A/μs, VR = 200V Characteristic Values Min. Typ. Max. 1A 5A 4V 3.5 μs IXTF1N400 ISOPLUS i4-PakTM (HV) Outline Pin 1 = Gate Pin 2 = Soure Pin 3 = Drain Pin 4 = Isolated Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Part must be heatsunk for high-temp Idss measurement. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 IXTF1N400 ID - Amperes ID - Amperes 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 Fig. 1. Output Characteristics @ TJ = 25ºC VGS = 10V 5V 4.5V 4V 3V 5 10 15 20 25 30 35 40 45 50 VDS - Volts 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 Fig. 3. Output Characteristics @ TJ = 125ºC VGS = 10V 5V 4V 3V 10 20 30 40 50 60 70 80 90 100 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 0.5A Value vs. Drain Current 2.4 2.2 VGS = 10V 2.0 TJ = 125ºC 1.8 1.6 1.4 1.2 TJ = 25ºC 1.0 0.8 0 0.2 0.4 0.6 0.8 1 ID - MilliAmperes 1.2 1.4 ID - Amperes RDS(on) - Normalized ID - Amperes Fig. 2. Extended Output Characteristics @ TJ = 25ºC 1.4 VGS = 10V 1.2 5V 1 0.8 0.6 0.4 0.2 0 0 4.5V 4V 3V 50 100 150 200 250 300 350 400 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs. Junction Temperature 2.6 VGS = 10V 2.2 1.8 I D = 1.0A 1.4 I D = 0.5A 1.0 0.6 0.2 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Maximum Drain Current vs. Case Temperature 1.2 1 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade RDS(on) - Normalized © 2012 IXYS CORPORATION, All Rights Reserved IXTF1N400 ID - Amperes Fig. 7. Input Admittance 1.4 1.2 1 0.8 TJ = 125ºC 25ºC 0.6 - 40ºC 0.4 0.2 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 2.4 2 1.6 TJ = 25ºC 1.2 TJ = 125ºC 0.8 0.4 0 0 0.5 1 1.5 2 2.5 3 3.5 VSD - Volts 10,000 f = 1 MHz Fig. 11. Capacitance 1,000 Ciss Coss 100 Z(th)JC - ºC / W VGS - Volts g f s - Siemens 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 Fig. 8. Transconductance TJ = - 40ºC 25ºC 125ºC 0.2 0.4 0.6 0.8 1 ID - Amperes 1.2 1.4 Fig. 10. Gate Charge 10 9 VDS = 1000V 8 I D = 0.5A I G = 10mA 7 6 5 4 3 2 1 0 0 10 20 30 40 50 60 70 80 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance 1 0.1 IS - Amperes Capacitance - PicoFarads 10 0 Crss 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 0.01 0.0001 0.001 0.01 0.1 Pulse Width - Seconds 1 10 IXYS REF: T_1N400(8P)8-25-09-A .


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