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IXTK5N250 Dataheets PDF



Part Number IXTK5N250
Manufacturers IXYS
Logo IXYS
Description High Voltage Power MOSFETs
Datasheet IXTK5N250 DatasheetIXTK5N250 Datasheet (PDF)

Advance Technical Information High Voltage Power MOSFET w/ Extended FBSOA N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA IXTK5N250 IXTX5N250 VDSS ID25 RDS(on) = 2500V = 5A < 8.8Ω TO-264 (IXTK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic.

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Advance Technical Information High Voltage Power MOSFET w/ Extended FBSOA N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA IXTK5N250 IXTX5N250 VDSS ID25 RDS(on) = 2500V = 5A < 8.8Ω TO-264 (IXTK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force (PLUS247) TO-264 PLUS247 Maximum Ratings 2500 2500 V V ±30 V ±40 V 5A 20 A 2.5 A 2.5 J 960 W -55 to +150 150 -55 to +150 300 260 °C °C °C °C °C 1.13/10 20..120 /4.5..27 Nm/lb.in. N/lb. 10 g 6g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = ±30V, VDS = 0V IDSS VDS = 2kV, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 2500 V 2.0 5.0 V ±200 nA 50 μA 4 mA 8.8 Ω G D S PLUS247 (IXTX) Tab G DS Tab G = Gate S = Source D = Drain Tab = Drain Features z Avalanche Rated z Fast Intrinsic Diode z Guaranteed FBSOA at 75°C z Low Package Inductance Advantages z Easy to Mount z Space Savings Applications z High Voltage Power Supplies z Capacitor Discharge z Pulse Circuits © 2010 IXYS CORPORATION, All Rights Reserved DS100280(08/10) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = 50V, ID = 0.5 • ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs Qgd VGS = 10V, VDS = 1000V, ID = 0.5 • ID25 RthJC RthCS Characteristic Values Min. Typ. Max. 3.0 4.5 6.0 S 8560 315 90 pF pF pF 33 ns 20 ns 90 ns 44 ns 200 nC 28 nC 70 nC 0.13 °C/W 0.15 °C/W Safe Operating Area Specification Symbol SOA Test Conditions VDS = 2000V, ID = 0.11A, TC = 75°C, tp = 3s Characteristic Values Min. Typ. Max. 220 W Source-Drain Diode TO-264 Outline IXTK5N250 IXTX5N250 Dim. Millimeter Min. Max. A 4.82 5.13 A1 2.54 2.89 A2 2.00 2.10 b 1.12 1.42 b1 2.39 2.69 b2 2.90 3.09 c 0.53 0.83 D 25.91 26.16 E 19.81 19.96 e 5.46 BSC J 0.00 0.25 K 0.00 0.25 L 20.32 20.83 L1 2.29 2.59 P 3.17 3.66 Q 6.07 6.27 Q1 8.38 8.69 R 3.81 4.32 R1 1.78 2.29 S 6.04 6.30 T 1.57 1.83 Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain Inches Min. Max. .190 .100 .079 .202 .114 .083 .044 .094 .114 .056 .106 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .090 .820 .102 .125 .144 .239 .330 .247 .342 .150 .070 .170 .090 .238 .248 .062 .072 PLUS247TM Outline Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr IF = 2.5A, -di/dt = 100A/μs, VR = 100V Characteristic Values Min. Typ. Max. 5A 20 A 1.5 V 1.2 .


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