Advance Technical Information
High Voltage Power MOSFET w/ Extended FBSOA
N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA
IXTK5N250 IXTX5N250
VDSS ID25
RDS(on)
= 2500V = 5A < 8.8Ω
TO-264 (IXTK)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg
TL TSOLD
Md FC
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force (PLUS247) TO-264 PLUS247
Maximum Ratings 2500 2500
V V
±30 V ±40 V
5A 20 A
2.5 A 2.5 J
960 W
-55 to +150 150
-55 to +150
300 260
°C °C °C
°C °C
1.13/10 20..120 /4.5..27
Nm/lb.in. N/lb.
10 g 6g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 1mA
IGSS VGS = ±30V, VDS = 0V
IDSS VDS = 2kV, VGS = 0V TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteri.