IXTP18P10T

TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTY18P10T IXTA18P10T IXTP18P10T Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-252 TO-263 TO-220 Maximum Ratings -100 -100 V V ±15 V ±25 V -18 A - 60 A -18 A 200 mJ 83 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 1.13 / 10 °C °C Nm/lb.in. 0.35 g 2.50 g 3.00 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ± 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = -10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. -100 V - 2.5 - 4.5 V ±50 nA - 3 μA -100 μA 120 mΩ VDSS = ID25 = ≤RDS(on) -100V -18A 120mΩ TO-252 (IXTY) G S D (Tab) TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) GD S D (Tab) G = Gate D = Drain S = Source Tab = Drain Features z International Standard Packages z Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Advantages z Easy to Mount z Space Savings z High Power Density Applications z High-Side Switching z Push Pull Amplifiers z DC Choppers z Automatic Test Equipment z Current Regulators z Battery Charger Applications © 2013 IXYS CORPORATION, ...