AM2301

AiT Semiconductor Inc. www.ait-ic.com   AM2301 MOSFET -20V P-CHANNEL ENHANCEMENT MODE DESCRIPTION The AM2301 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package. FEATURES  -20V/-3.2A, RDS(ON)=90mΩ(typ.)@VGS =-4.5V  -20V/-2.0A, RDS(ON)=130mΩ(typ.)@VGS =-2.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  This is a Green compliance  Available in a SOT-23 package. AM2301 is available in a SOT-23 package. ORDERING INFORMATION Package Type Part Number SOT-23 AM2301E3R E3 AM2301E3VR Note R: Tape & Reel V: Green Package AiT provides all Pb free products Suffix “ V “ means Green Package APPLICATION  Power Management in Note book  Portable Equipment  DSC  LCD Display inverter  Battery Powered System  DC/DC Converter  Load Switch P CHANNEL MOSFET REV1.0   - JUN 2010 RELEASED – -1- AiT Semiconductor Inc. www.ait-ic.com   PIN DESCRIPTION AM2301 MOSFET -20V P-CHANNEL ENHANCEMENT MODE Pin # 1 2 3 Symbol G S D Top View Function Gate Source Drain REV1.0   - JUN 2010 RELEASED – -2- AiT Semiconductor Inc. www.ait-ic.com   AM2301 MOSFET -20V P-C...