AM3400 | AiT Semiconductor
30V N-CHANNEL ENHANCEMENT MODE MOSFET
AiT Semiconductor Inc.
www.ait-ic.com
AM3400
MOSFET
30V N-CHANNEL ENHANCEMENT MODE
DESCRIPTION
The AM3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON).
This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for .
- AM3400 | AiT Semiconductor
- 30V N-CHANNEL ENHANCEMENT MODE MOSFET
- AiT Semiconductor Inc.
www.ait-ic.com
AM3400
MOSFET
30V N-CHANNEL ENHANCEMENT MODE
DESCRIPTION.
- AiT Semiconductor Inc.
www.ait-ic.com
AM3400
MOSFET
30V N-CHANNEL ENHANCEMENT MODE
DESCRIPTION
The AM3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON).
This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power los.
- AM3400 | AXElite
- N-Channel Enhancement Mode MOSFET
- AM3400
N-Channel Enhancement Mode MOSFET
Features
•
30V/3A , RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=4.
- AM3400
N-Channel Enhancement Mode MOSFET
Features
•
30V/3A , RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=40mΩ(typ.) @ VGS=4.5V RDS(ON)=60mΩ(typ.) @ VGS=2.5V
Pin Description
Top View
D
• • •
Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant)
G S
SOT-23
D
Applications
•
Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems.
S G
Ordering and Marking Information
VÛmw.
- AM3400A | AiT Semiconductor
- 30V N-CHANNEL ENHANCEMENT MODE MOSFET
- AiT Semiconductor Inc.
www.ait-ic.com
AM3400A
MOSFET
30V N-CHANNEL ENHANCEMENT MODE
DESCRIPTIO.
- AiT Semiconductor Inc.
www.ait-ic.com
AM3400A
MOSFET
30V N-CHANNEL ENHANCEMENT MODE
DESCRIPTION
The AM3400A is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON).
This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power l.
