AM3406

AiT Semiconductor Inc. www.ait-ic.com AM3406 30V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM3406 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.  30V/6.0A, RDS(ON) = 20mΩ(typ.) @VGS = 10V  30V/4.8A, RDS(ON) = 27mΩ(typ.) @VGS = 4.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  This is a Full Green compliance  Available in SOT-23 Package APPLICATIONS The AM3406 is available in SOT-23 Package. ORDERING INFORMATION Package Type Part Number SOT-23 AM3406E3R E3 AM3406E3VR Note R : Tape & Reel V: Green Package AiT provides all Pb free products Suffix “ V “ means Green Package  Power Management in Note book  Portable Equipment  DSC  LCD Display inverter  Battery Powered System  DC/DC Converter P CHANNEL MOSFET N-Channel REV1.0 - MAR 2011 RELEASED - -1- AiT Semiconductor Inc. www.ait-ic.com PIN DESCRIPTION AM3406 30V N-CHANNEL ENHANCEMENT MODE MOSFET Pin # 1 2 3 Top View Symbol G S D Function Gate Source Drain REV1.0 - MAR 2011 RELEASED - -2- AiT Semiconductor Inc. www.ait-ic.com AM3406 30V N-CHANNEL ENHANCEME...