AM4812

AiT Semiconductor Inc. www.ait-ic.com AM4812 30V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The AM4812 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). This high density process is especially tailored to minimize on-state resistance. FEATURES  30V / 7.8A, RDS(ON) = 16mΩ (typ.)@VGS = 10V  30V / 5.8A, RDS(ON) = 22mΩ (typ.)@VGS = 4.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Available in SOP8 Package The AM4812 is particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package. The AM4812 is available in SOP8 Package. APPLICATION  High Frequency Point-of-Load Synchronous  New working DC-DC Power System  Load Switch ORDERING INFORMATION N CHANNEL MOSFET Package Type Part Number SOP8 AM4812M8R M8 AM4812M8VR Note R: Tape & Reel V: Green Package AiT provides all Pb free products Suffix “ V “ means Green Package REV1.0 - JUN 2011 RELEASED – -1- AiT Semiconductor Inc. www.ait-ic.com PIN DESCRIPTION AM4812 30V N-CHANNEL ENHANCEMENT MODE MOSFET Pin # 1 2 3 4 5 6 7 8 Symbol S S S G D D D D Top View Source Source Source Gate Drain Drain Drain Drain Function REV1.0 - JUN 2011 RELEASED – -2- AiT Semiconductor Inc. www.ait-ic.com AM4812 30V N-CHANNEL ENHANCEMENT MODE MOSFET ABSOLUTE MAXI...