AM8958

AiT Semiconductor Inc. www.ait-ic.com   AM8958 MOSFET N+P PAIR ENHANCEMENT MODE DESCRIPTION FEATURES The AM8958 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low voltage application such as notebook computer power management and other battery powered circuits, where high-side switching, low inline power loss and resistance to transient are needed. The AM8958 is available in SOP8 Package N-Channel  30V /6.8A, RDS(ON) = 23mΩ(typ.)@VGS = 10V  30V /6.5A, RDS(ON) = 34mΩ(typ.)@VGS = 4.5V P-Channel  -30V / -6.5A, RDS(ON) = 35mΩ(typ.)@VGS = -10V  -30V / -4.4A, RDS(ON) = 60mΩ(typ.)@VGS = -4.5V  Super high density cell design for extremely low RDS(ON)  Exceptional on-resistance and Maximum DC current capability  Available in SOP8 Package APPLICATION ORDERING INFORMATION Package Type Part Number SOP-8 AM8958M8R M8 AM8958M8VR Note R: Tape & Reel V: Green Package AiT provides all Pb free products Suffix “ V “ means Green Package  Power Management in Note book  Portable Equipment  Battery Powered System P-CHANNEL MOSFET N-Channle P-Channle REV1.0   - JUL 2010 RELEASED – -1- AiT Semiconductor Inc. www.ait-ic.com   PIN DESCRIPTION AM8958 MOSFET N+P PAIR ENHANCEMENT MODE Pin # 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Top V...