NCE0157T

http://www.ncepower.com Pb Free Product NCE0157T NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE0157T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS = 100V,ID =57A RDS(ON) < 16mΩ @ VGS=10V (Typ:11.7mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Marking and pin Assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-247 top view Package Marking And Ordering Information Device Marking Device Device Package NCE0157T NCE0157T TO-247 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Parameter Symbol VDS VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor ID (100℃) IDM PD Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range EAS TJ,TSTG Limit 100 ±20 57 40 190 180 1.2 580 -55 To 175 Unit V V A A A W W/℃ mJ ℃ Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.ncepower.com Pb Free Product NC...