NCE0160S

http://www.ncepower.com Pb Free Product NCE0160S NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE0160S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. GENERAL FEATURES ● VDS = 100V,ID =60A RDS(ON) <16mΩ @ VGS=12.6V ● Special designed for Convertors and power controls ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply 100% UIS TESTED! 100% ΔVds TESTED! Schematic diagram Marking and pin Assignment PowerPAK SO-8 Bottom view Package Marking And Ordering Information Device Marking Device Device Package NCE0160 NCE0160S PowerPAK SO-8 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Drain-Source Voltage Gate-Source Voltage Parameter Symbol VDS VGS Drain Current-Continuous ID Drain Current-Continuous(TC=70℃) Pulsed Drain Current Maximum Power Dissipation Derating factor ID (70℃) IDM PD Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range EAS TJ,TSTG Limit 100 ±20 60 50 80 105 0.70 550 -55 To 175 Unit V V A A A W W/℃ mJ ℃ Thermal Characteristic Wuxi NCE Power Semiconductor Co., Ltd...