NCE01H14T

http://www.ncepower.com Pb Free Product NCE01H14T NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H14T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =100V,ID =140A RDS(ON) < 5.5mΩ @ VGS=10V (Typ4.5mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-247 top view Package Marking and Ordering Information Device Marking Device Device Package NCE01H14T NCE01H14T TO-247 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor ID (100℃) IDM PD Single pulse avalanche energy (Note 5) EAS Limit 100 ±20 140 97 550 340 2.27 1200 Unit V V A A A W W/℃ mJ Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.ncepower.com Pb Free Product NCE01H14T Operating Junction and Storage Temperature Range The...