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NCE0224D Dataheets PDF



Part Number NCE0224D
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description NCE N-Channel Enhancement Mode Power MOSFET
Datasheet NCE0224D DatasheetNCE0224D Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCE0224D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =200V,ID =24A RDS(ON) < 80mΩ @ VGS=10V (Typ:64mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent pac.

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http://www.ncepower.com Pb Free Product NCE0224D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0224D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =200V,ID =24A RDS(ON) < 80mΩ @ VGS=10V (Typ:64mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-263-2L top view Package Marking and Ordering Information Device Marking Device Device Package NCE0224D NCE0224D TO-263-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range ID (100℃) IDM PD EAS TJ,TSTG Limit 200 ±20 24 17 100 150 250 -55 To 175 Unit V V A A A W mJ ℃ Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.ncepower.com Pb Free Product NCE0224D Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 1 ℃/W Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current On Characteristics (Note 3) BVDSS IDSS IGSS VGS=0V ID=250μA VDS=200V,VGS=0V VGS=±20V,VDS=0V 200 220 --- 1 ±100 V μA nA Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance Dynamic Characteristics (Note4) VGS(th) RDS(ON) gFS VDS=VGS,ID=250μA VGS=10V, ID=15A VDS=50V,ID=15A 23 - 64 30 - 4 80 - V mΩ S Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 4) Clss Coss Crss VDS=25V,VGS=0V, F=1.0MHz 4200 163 75 PF PF PF Turn-on Delay Time Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge td(on) tr td(off) tf Qg Qgs Qgd VDD=100V,ID=15A VGS=10V,RGEN=2.5Ω VDS=100V,ID=15A, VGS=10V - 10 - 18 - 22 -5 60 19 17 - nS nS nS nS nC nC nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current (Note 2) Reverse Recovery Time Reverse Recovery Charge VSD VGS=0V,IS=11A - - 1.2 V IS - -- 24 A trr TJ = 25°C, IF = 15A - 90 - nS Qrr di/dt = 100A/μs(Note3) - 300 - nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition:Tj=25℃,VDD=100V,VG=10V,L=0.5mH,Rg=25Ω Wuxi NCE Power Semiconductor Co., Ltd Page 2 v1.0 http://www.ncepower.com Test circuit 1) EAS test Circuit Pb Free Product NCE0224D 2) Gate charge test Circuit 3) Switch Time Test Circuit Wuxi NCE Power Semiconductor Co., Ltd Page 3 v1.0 http://www.ncepower.com Typical Electrical and Thermal Characteristics (Curves) Pb Free Product NCE0224D Normalized On-Resistance ID- Drain Current (A) Vds Drain-Source Voltage (V) Figure 1 Output Characteristics TJ-Junction Temperature(℃) Figure 4 Rdson-JunctionTemperature Vgs Gate-Source Voltage (V) ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 2 Transfer Characteristics Qg Gate Charge (nC) Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance(mΩ) ID- Drain Current (A) Figure 3 Rdson- Drain Current Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward Wuxi NCE Power Semiconductor Co., Ltd Page 4 v1.0 C Capacitance (pF) http://www.ncepower.com Pb Free Product NCE0224D Normalized BVdss Vds Drain-Source Voltage (V) Figure 7 Capacitance vs Vds TJ-Junction Temperature(℃) Figure 9 BVDSS vs Junction Temperature Vds Drain-Source Voltage (V) Figure 8 Safe Operation Area TJ-Junction Temperature(℃) Figure 10 VGS(th) vs Junction Temperature ID- Drain Current (A) r(t),Normalized Effective Transient Thermal Impedance Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance Wuxi NCE Power Semiconductor Co., Ltd Page 5 v1.0 http://www.ncepower.com TO-263-2L Package Information Pb Free Product NCE0224D Symbol A A1 B b b1 c c1 D E e e1 L L1 L2 L3 V Dimensions In Millimeters Min. 4.470 Max. 4.670 0.000 0.150 1.170 1.370 0.710 0.910 1.170 1.370 0.310 0.530 1.170 1.370 10.010 10.310 8.500 8.900 .


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