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NCE0218K Dataheets PDF



Part Number NCE0218K
Manufacturers NCE Power Semiconductor
Logo NCE Power Semiconductor
Description NCE N-Channel Enhancement Mode Power MOSFET
Datasheet NCE0218K DatasheetNCE0218K Datasheet (PDF)

http://www.ncepower.com Pb Free Product NCE0218K NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE0218K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =200V,ID =18A RDS(ON) < 80mΩ @ VGS=10V (Typ:65mΩ) ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent pac.

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http://www.ncepower.com Pb Free Product NCE0218K NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE0218K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =200V,ID =18A RDS(ON) < 80mΩ @ VGS=10V (Typ:65mΩ) ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Marking and pin Assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-252 top view Package Marking And Ordering Information Device Marking Device Device Package NCE0218K NCE0218K TO-252 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range ID (100℃) IDM PD EAS TJ,TSTG Limit 200 ±20 18 13 72 140 250 -55 To 175 Unit V V A A A W mJ ℃ Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.2 http://www.ncepower.com Pb Free Product NCE0218K Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC 1.07 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 200 220 - V Zero Gate Voltage Drain Current IDSS VDS=200V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1 1.5 2 V Drain-Source On-State Resistance Forward Transconductance RDS(ON) gFS VGS=10V, ID=15A VDS=50V,ID=11A - 65 25 - 80 - mΩ S Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Clss Coss Crss VDS=25V,VGS=0V, F=1.0MHz 4200 163 75 PF PF PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 10 - nS Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time tr td(off) tf VDD=100V,ID=15A VGS=10V,RGEN=2.5Ω - 18 - 22 -5 - nS nS nS Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs Qgd VDS=100V,ID=15A, VGS=10V 60 19 17 nC nC nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=11A - - 1.2 V Diode Forward Current (Note 2) Reverse Recovery Time Reverse Recovery Charge IS - -- 18 A trr TJ = 25°C, IF = 15A - 90 - nS Qrr di/dt = 100A/μs(Note3) - 300 - nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rat.


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