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Pb Free Product
NCE0218K
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE0218K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
● VDS =200V,ID =18A RDS(ON) < 80mΩ @ VGS=10V
(Typ:65mΩ)
● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Schematic diagram
Application
● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED! 100% ΔVds TESTED!
TO-252 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE0218K
NCE0218K
TO-252
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
VDS VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range
ID (100℃)
IDM PD
EAS
TJ,TSTG
Limit
200 ±20
18
13 72 140 250 -55 To 175
Unit
V V A
A A W mJ ℃
Wuxi NCE Power Semiconductor Co., Ltd
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Pb Free Product
NCE0218K
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
1.07 ℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
200 220
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=200V,VGS=0V
- - 1 μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
- - ±100 nA
On Characteristics (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1 1.5
2
V
Drain-Source On-State Resistance Forward Transconductance
RDS(ON) gFS
VGS=10V, ID=15A VDS=50V,ID=11A
- 65 25 -
80 -
mΩ S
Dynamic Characteristics (Note4)
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Clss Coss Crss
VDS=25V,VGS=0V, F=1.0MHz
4200 163 75
PF PF PF
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
- 10
-
nS
Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time
tr td(off)
tf
VDD=100V,ID=15A VGS=10V,RGEN=2.5Ω
- 18 - 22 -5
-
nS nS nS
Total Gate Charge Gate-Source Charge Gate-Drain Charge
Qg Qgs Qgd
VDS=100V,ID=15A, VGS=10V
60 19 17
nC nC nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
VGS=0V,IS=11A
- - 1.2
V
Diode Forward Current (Note 2)
Reverse Recovery Time Reverse Recovery Charge
IS
-
--
18
A
trr
TJ = 25°C, IF = 15A
- 90
-
nS
Qrr
di/dt = 100A/μs(Note3)
- 300
-
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rat.