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AP4435 Dataheets PDF



Part Number AP4435
Manufacturers Advanced Power Electronics
Logo Advanced Power Electronics
Description 30 P-Channel Enhancement-Mode MOSFET
Datasheet AP4435 DatasheetAP4435 Datasheet (PDF)

30 P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, [email protected] = 21m RDS(ON), [email protected], [email protected] = 35m Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance AP4435 Preliminary Data Sheet S0-8 Internal Schematic Diagram Drain Gate Top View Source P-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA = 25 oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS ID L.

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30 P-Channel Enhancement-Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, [email protected] = 21m RDS(ON), [email protected], [email protected] = 35m Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance AP4435 Preliminary Data Sheet S0-8 Internal Schematic Diagram Drain Gate Top View Source P-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA = 25 oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS ID Limit -30 ±20 -7 Pulsed Drain Current 1) Maximum Power Dissipation TA = 25oC TA = 75oC IDM PD -50 1.5 0.9 Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) 2) Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature 2. 1-in2 2oz Cu PCB board 3. Guaranteed by design; not subject to production testing TJ, Tstg R JA -55 to 150 85 Unit V A W oC oC/W July '06 Rev 1 ELECTRICAL CHARACTERISTICS Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Symbol BVDSS RDS(on) RDS(on) VGS(th) IDSS IGSS gfs Qg Qgs Qgd td(on) tr Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode td(off) tf Ciss Coss Crss Max. Diode Forward Current Diode Forward Voltage IS VSD Note: Pulse test: pulse width <= 300us, duty cycle<= 2% AP4435 Preliminary Data Sheet P-Channel Enhancement-Mode MOSFET Test Condition VGS = 0V, ID = -250uA VGS = -10V, ID = -9.1A VGS = -4.5V, ID = -6.9A VDS =VGS, ID = -250uA VDS = -30V, VGS = 0V VGS = ± 20V, VDS = 0V VDS = -10V, ID = -9.1A VDS = 20V, ID = 5.7A VGS = 10V VDD = 20V, RL=20 ID = 1A, VGEN = 10V RG = 6 VDS = 8V, VGS = 0V f = 1.0 MHz IS = 1.8A, VGS = 0V Min Typ Max Unit -30 V 17.0 21.0 23.0 35.0 m -1 -3 V -1 uA ±100 nA 24 S nC ns pF A V July '06ev Disclaimer Notice Notice Specification of the products displayed herein are subject to change without notice. Continuous development may necessitate changes in technical data without notice. GMOS Semiconductor Sdn. Bhd. or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. July '06 Rev 1 3 .


KPC394x4DE4D7xxxx AP4435 D5076


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