20V Dual N-Channel MOSFET
AO9926B
20V Dual N-Channel MOSFET
General Description
The AO9926B uses advanced trench technology to provide excellent ...
Description
AO9926B
20V Dual N-Channel MOSFET
General Description
The AO9926B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a unidirectional or bi-directional load switch.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS=2.5V) RDS(ON) (at VGS=1.8V)
20V 7.6A < 23mΩ < 26mΩ < 34mΩ < 52mΩ
Top View
SOIC-8 Bottom View
Top View
S2 1 8
G2 2 7 S1 3 6 G1 4 5
D2 D2 D1 D1
G1
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID IDM
TA=25°C Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum 20 ±12 7.6 6.1 38 2 1.28
-55 to 150
D1 D2
G2 S1
S2
Units V V
A
W °C
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 48 74 32
Max
Units
62.5
°C/W
90 °C/W
40 °C/W
Rev 3: July 2010
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AO9926B
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS VGS(th) ID(ON)
Gate-Body leakage current Gate Threshol...
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