HFI640

HFW640 / HFI640 Mar 2008 HFW640 / HFI640 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.145Ω ID = 18 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 37 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.145 Ω (Typ.) @VGS=10V  100% Avalanche Tested D2-PAK I2-PAK 2 1 3 HFW640 1 2 3 HFI640 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 200 18 11.4 72 ±30 250 18 13.9 5.5 PD Power Dissipation (TA = 25℃) Power Dissipation (TC = 25℃) - Derate above 25℃ TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Resistance Characteristics 3.13 139 1.11 -55 to +150 300 Symbol RθJC Rθ JA RθJA Junction-to-Case Parameter Junction-to-Ambient* Junction-to-Ambient Typ. ---- Max. 0.9 40 62.5 * When mounted on the minimum pad size recommended (PCB Mount) Units V A A A V mJ A mJ V/ns W W W/℃ ℃ ℃ Units ℃/W ◎ SEMIHOW REV.A0,Mar ...