200V N-Channel MOSFET
HFS640
Nov 2005
HFS640
200V N-Channel MOSFET
BVDSS = 200 V RDS(on) typ ȍ ID = 18* A
FEATURES
Originative New...
Description
HFS640
Nov 2005
HFS640
200V N-Channel MOSFET
BVDSS = 200 V RDS(on) typ ȍ ID = 18* A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 37 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested
TO-220F
12 3
1.Gate 2. Drain 3. Source D
G
S
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ఁ͚͑
– Continuous (TC = 100ఁ͚͑
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
200 18* 11.4* 72* ρͤ͑͡ 250 18.0 13.9 5.5
PD Power Dissipation (TC = 25ఁ͚͑ ͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature
43 0.35 -55 to +150
300
Thermal Resistance Characteristics
Symbol RșJC
RșJA
Junction-to-Case
Parameter
Junction-to-Ambient
Typ. ---
Max. 2.89 62.5
Units V A A A V mJ A mJ
V/ns W W/ఁ͑ ఁ͑
ఁ͑
Units
ఁ͠Έ͑
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝ͿΠΧ͑ͣͦ͑͡͡
HFS640
Electrical Characteristics TC=25 qC unless otherwise specifie...
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