HFS75N75

HFS75N75 Dec 2008 HFS75N75 75V N-Channel MOSFET BVDSS = 75 V RDS(on) typ=10.5 mΩ ID = 80 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 77 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.0105 Ω (Typ.) @VGS=10V  100% Avalanche Tested TO-220F 12 3 1.Gate 2. Drain 3. Source D G S Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 75 80* 56* 320* ±20 1476 80 16 7.0 45 0.36 -55 to +175 300 * Drain current limited by junction temperature Thermal Resistance Characteristics Symbol RθJC RθJA Junction-to-Case Parameter Junction-to-Ambient Typ. --- Max. 3.3 62.5 Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃ Units ℃/W ◎ SEMIHOW REV.A1,Dec 2008 HFS75N75 Electrical Characteristics TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max ...