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HFP630

200V N-Channel MOSFET

Description

HFP630 July 2005 HFP630 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.34 ȍ ID = 9 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0...

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