HFW75N75

HFW75N75 Mar 2007 HFW75N75 75V N-Channel MOSFET BVDSS = 75 V RDS(on) typ=10.5 mΩ ID = 80 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 77 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : ...