HFU2N60

HFD2N60_HFU2N60 July 2005 HFD2N60 / HFU2N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 1.8 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 9.0 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ7\S #9GS=10V ‰ 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD2N60 1 2 3 HFU2N60 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ఁ͚͑ – Continuous (TC = 100ఁ͚͑ – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 600 1.8 1.1 7.2 ρ30 150 1.8 4.4 5.5 PD TJ, TSTG TL Power Dissipation (TA=25 qC) * Power Dissipation (TC = 25ఁ͚͑ ͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 2.5 44 0.35 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W W/ఁ͑ ఁ͑ ఁ͑ Thermal Resistance Characteristics Symbol Parameter RșJC Junction-to-Case RșJA Junction-to-Ambient* RșJA Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) Typ. ---- Max. 2.87 50 1...