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HFP7N60
N-Channel MOSFET
Description
HFP7N60 HFP7N60 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 25 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.96 Ω (Typ.) @VGS=10V Dec 2005 BVDSS = 600 V RDS(on) t...
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