HFU2N65

HFU2N65 Nov 2008 HFU2N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 4.5 Ω ID = 1.6 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 9.0 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 4.5 Ω (Typ.) @VGS=10V  100% Avalanche Tested I-PAK 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 650 1.6 1.0 6.4 ±30 120 1.6 4.4 5.5 PD TJ, TSTG TL Power Dissipation (TA = 25℃) * Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 2.5 44 0.35 -55 to +150 300 Units V A A A V mJ A mJ V/ns W W W/℃ ℃ ℃ Thermal Resistance Characteristics Symbol RθJC RθJA RθJA Junction-to-Case Parameter Junction-to-Ambient* Junction-to-Ambient Typ. ---- Max. 2.87 50 110 Units ℃/W ◎ SEMIHOW REV.A0,Nov 2008 HFU2N65 Electrical Characteristics TC=25 C unless otherwise specified Symbol Parameter Test Conditions Min ...