N-Channel MOSFET
HFP2N65
July 2007
HFP2N65
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ = 4.5 Ω ID = 1.8 A
FEATURES
Originative ...
Description
HFP2N65
July 2007
HFP2N65
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ = 4.5 Ω ID = 1.8 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 4.5 Ω (Typ.) @VGS=10V 100% Avalanche Tested
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25℃) – Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
650 1.8 1.1 7.2 ±30 120 1.8 5.4 5.5
PD
TJ, TSTG TL
Power Dissipation (TC = 25℃) - Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
54 0.43 -55 to +150
300
Units V A A A V mJ A mJ
V/ns W W/℃ ℃
℃
Thermal Resistance Characteristics
Symbol RθJC RθCS
RθJA
Junction-to-Case
Parameter
Case-to-Sink
Junction-to-Ambient
Typ. -0.5 --
Max. 2.32
-62.5
Units ℃/W
◎ SEMIHOW REV.A0,July 2007
HFP2N65
Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS RDS(ON)
G...
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