HFD2N65S

HFD2N65S_HFU2N65S Mar 2010 HFD2N65S / HFU2N65S 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 5.0 ȍ ID = 1.6 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 6.0 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 5.0 ȍ (Typ.) @VGS=10V ‰ 100% Avalanche Tested D-PAK I-PAK 2 1 3 HFD2N65S 1 2 3 HFU2N65S 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ഒ) – Continuous (TC = 100ഒ͚ – Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 650 1.6 1.0 6.4 ρ30 100 1.6 4.4 4.5 PD TJ, TSTG TL Power Dissipation (TA = 25ఁ) * Power Dissipation (TC = 25ഒ͚ - Derate above 25ഒ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 2.5 44 0.35 -55 to +150 300 Units 9 $ $ $ 9 P$ P- 9QV : : :ഒ ഒ ഒ Thermal Resistance Characteristics Symbol RșJC RșJA RșJA Junction-to-Case Parameter Junction-to-Ambient* Junction-to-Ambient * When mounted on the minimum pad size recommended (PCB Mount) Typ. ---- Max. 2.87 50 110 Units ഒ: క ΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝...